1EV GANxAS1-x-ySBy MATERIAL FOR LATTICE-MATCHED III-V SOLAR CELL IMPLEMENTATION ON GAAS AND GE
نویسندگان
چکیده
The effect of different arsenic species (As2 or As4) on the quality of molecular beam epitaxy (MBE) grown GaNAsSb materials (samples A and B) and GaAs/ GaNAsSb/GaAs p + n n + devices (samples C and D) were investigated. The improvement in material quality in sample B, as well as the improvement in diode and solar cell characteristics in sample C, may suggest a successful defect density manipulation using As2 overpressure for GaNAsSb growth.
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